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DATA SHEET
COMPOUND TRANSISTOR
BB1 SERIES
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA equipments such as VCRs and TVs.
FEATURES
* Up to 0.7 A current drive available * On-chip bias resistor * Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
* Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
Electrode Connection 1. Emitte (E) 2. Collector (C) 3. Base (B)
BB1 SERIES LISTS
Products BB1A4A BB1L2Q BB1A3M BB1F3P BB1J3P BB1L3N BB1A4M R1 (K) - 0.47 1.0 2.2 3.3 4.7 10 R2 (K) 10 4.7 1.0 10 10 10 10
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11739EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan
(c)
2002 1998
BB1 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter Collector to base volgate Colletor to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)Note 1 IB(DC) PT Tj Tstg Ratings 30 25 10 0.7 1.0 0.02 250 150 -55 to +150 Unit V V V A A A mW C C
Note 1 PW 10 ms, duty cycle 50 %
BB1A4A ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1Note 2 hFE2
Note 2
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A IC = 0.5 A, IB = 5 mA VCE = 5.0 V, IC = 100 A
MIN.
TYP.
MAX. 100
Unit nA - - -
300 300 135 0.27 - 7 - 10 0.4 0.3 - 13
hFE3Note 2 VCE(sat) VIL
Note 2
V V k
Note 2
R1 R2
Note 2 PW 350 s, duty cycle 2 %
BB1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1
Note 2
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 A
MIN.
TYP.
MAX. 100
Unit nA - - -
150 300 135
400 700 600 0.2 0.3 0.3
hFE2Note 2 hFE3 VOL
Note 2
Note 2
V V k
VILNote 2 R1 R2
329 3.29
470 4.7
611 6.11
Note 2 PW 350 s, duty cycle 2 %
2
Data Sheet D11739EJ2V0DS
BB1 SERIES
BB1A3M ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1Note 2 hFE2 hFE3
Note 2
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 A
MIN.
TYP.
MAX. 100
Unit nA - - -
80 100 135 0.3 0.4 0.3 0.7 0.7 1.0 1.0 1.3 1.3
Note 2
VOLNote 2 VILNote 2 R1 R2
V V k k
Note 2 PW 350 s, duty cycle 2 %
BB1F3P ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 hFE2
Note 2
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.3 A VCE = 5.0 V, IC = 100 A
MIN.
TYP.
MAX. 100
Unit nA - - -
300 300 135 0.3 0.3 1.54 7 2.2 10 2.86 13
Note 2
hFE3Note 2 VOL VIL
Note 2
V V k k
Note 2
R1 R2
Note 2 PW 350 s, duty cycle 2 %
BP1J3P ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1
Note 2
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A
MIN.
TYP.
MAX. 100
Unit nA - - -
300 300 135
600 700 600 0.14 0.3 0.3
hFE2Note 2 hFE3 VOL
Note 2
Note 2
V V k k
VILNote 2 R1 R2
2.31 7
3.3 10
4.29 13
Note 2 PW 350 s, duty cycle 2 %
Data Sheet D11739EJ2V0DS
3
BB1 SERIES
BB1L3N ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1Note 2 hFE2 hFE3
Note 2
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A
MIN.
TYP.
MAX. 100
Unit nA - - -
300 300 135 0.3 0.3 3.29 7 4.7 10 6.11 13
Note 2
VOLNote 2 VILNote 2 R1 R2
V V k k
Note 2 PW 350 s, duty cycle 2 %
BB1A4M ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 hFE2
Note 2
Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A
MIN.
TYP.
MAX. 100
Unit nA - - -
300 300 135 0.3 0.3 7 7 10 10 13 13
Note 2
hFE3Note 2 VOL VIL
Note 2
V V k k
Note 2
R1 R2
Note 2 PW 350 s, duty cycle 2 %
4
Data Sheet D11739EJ2V0DS
BB1 SERIES
TYPICAL CHARACTERISTICS (Ta = 25C)
Data Sheet D11739EJ2V0DS
5
BB1 SERIES
* The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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